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| e PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description The 20174 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics Specified 26 Volts, 1490 MHz - Output Power = 90 Watts - IMD at 90 Watts = -28 dBc max. - Gain at 90 Watts = 7.5 dB min. Gold Metallization Silicon Nitride Passivated Typical Output Power and Efficiency vs. Input Power 120 90 VCC = 26 V 100 80 60 40 20 0 0 5 10 15 20 Output Power (Watts) ICQ = 250 mA Total f = 1490 MHz 80 70 60 50 40 30 Efficiency (%) 201 74 LOT COD E Input Power (Watts) Package 20224 Maximum Ratings Parameter Collector-Emitter Voltage (collector shorted) Collector-Base Voltage (emitter open) Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCES VCBO VEBO IC PD Value 52 50 4.0 15 290 1.67 150 0.6 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20174 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 21 52 3.5 20 Typ -- 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 90 W, ICQ = 250 mA Total, f = 1491 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 90 W, ICQ = 250 mA Total, f = 1491 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 45 W, ICQ = 250 mA Total, f = 1491 MHz--at all phase angles) Symbol Gpe Min 7.5 Typ 8.3 Max -- Units dB C 40 45 -- % -- -- 3:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) Z0 = 50 (VCC = 26 Vdc, Pout = 90 W, ICQ = 250 mA Total) Z Source Z Load Frequency MHz 1400 1450 1500 1550 1600 R 10.0 9.1 8.9 8.0 8.0 Z Source jX -7.8 -6.7 -4.9 -2.7 1.0 R 6.8 5.5 4.6 4.2 3.6 Z Load jX -6.8 -5.8 -4.8 -3.6 -1.9 2 9/28/98 e Typical Performance Gain vs. Frequency 9 8 PTB 20174 Intermodulation Distortion vs. Power Output -10 (as measured in a broadband circuit) VCC = 26 V -20 IMD (dBc) Gain (dB) 7 6 5 4 1440 -30 -40 ICQ = 250 mA Total f1 = 1490.0 MHz f2 = 1490.1 MHz 3rd Order 5th VCC = 26 V ICQ = 250 mA Total POUT = 90 W 7th -50 -60 1460 1480 1500 1520 1540 10 30 50 70 90 110 Frequency (MHz) Output Power (Watts-PEP) Output Power vs. Supply Voltage 110 100 90 80 70 60 50 18 20 22 24 26 28 30 Output Power (Watts) ICQ = 250 mA Total Pin = 15 W f = 1490 MHz Supply Voltage (V) 3 9/28/98 PTB 20174 Test Circuit e Block Diagram for f = 1.49 GHz Q1 l1 l2, l3, l10, l11 l4, l5 l6, l7 l8, l9 l12 Balun 1, 2 C1 C2, C3 C4, C5, C14, C15 C6, C7, C13, C16 C8, C9 C10 C11 C12, C17 C18, C19 L1, L2, L4, L5 L3, L6 L7 R1, R2 R3, R4 FB1, FB2 Circuit Board PTB 20174 -- NPN RF Transistor .410 1.49 GHz Microstrip 50 .250 1.49 GHz Microstrip 50 .190 1.49 GHz Microstrip 22 .083 1.49 GHz Microstrip 11.5 .225 1.49 GHz Microstrip 10.5 .210 1.49 GHz Microstrip 50 50 Coax, Semi-Rigid, .047 O.D., 1.5" long 0.3 - 3.5 pF, Variable Capacitor Jaco 5801-PC 18 pF, ATC 100 B 33 pF, ATC 100 B 1200 pF, ATC 100 B 10 F, 35 V Electrolytic Capacitor 0.3 pF, ATC 100 B 1.1 pF, ATC 100 B 100 F, 50 V Electrolytic Capacitor 22 pF, ATC 100 B 4 Turn, 24 AWG, .120" ID 7 Turn, 24 AWG, .120" ID 1 Turn, 24 AWG, .100" ID 22 , 1/4 Watt Resistor 12 , 1/8 Watt Resistor Ferrite Bead Copper Clad PTFE r = 2.5, .031" Thick Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20174 Uen Rev. D 09-28-98 4 |
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